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Northfield University
Academic · University research group

Thermal model extraction for GaN-on-Si HEMTs

StructureScopeGaN HEMTJESD51-14Compact models
3peer-reviewed papers using the extracted Cauer models
GaN device on test fixture
GaN device on test fixture

Challenge

A doctoral project required validated compact thermal models of GaN devices for coupled electro-thermal circuit simulation.

Approach

Transients were captured from 1 µs to 100 s at four baseplate temperatures, and Cauer networks were exported directly into SPICE.

Result

Simulated junction temperatures matched measurements within 2 K across the operating range. The group now runs the system as a shared facility for three departments.