Challenge
A supplier qualifying a sintered-silver 1200 V SiC half-bridge needed to know whether end-of-life failures came from the die attach or from bond wires.
Approach
Modules were power cycled at ΔTj = 100 K with a cumulative structure function recorded every 1,000 cycles, alongside VDS monitoring.
Result
The die-attach plateau shifted by 7 % well before any VDS change, which separated solder fatigue from bond-wire lift-off and shortened the qualification loop by one design iteration.